SANTA CLARA, Calif. and SUNNYVALE, Calif., Nov. 16 /Xinhua-PRNewswire/ --
VeriSilicon Holdings Co., Ltd. (VeriSilicon), a leading world class ASIC
design foundry and semiconductor IP provider, and MoSys, Inc. (Nasdaq: MOSY),
the industry’s leading provider of high density system-on-chip (SoC)
embedded memory solutions, today announced the companies are partnering to
further expand the adoption of MoSys’ popular 1T-SRAM technology by
providing VeriSilicon’ customers seamless access to the patented technology.
Under the terms of the partnership, VeriSilicon will add the 1T-SRAM
capability to its intellectual property (IP) portfolio offering, for use into
customer SoC designs, on multiple foundries.
VeriSilicon is a fabless ASIC design foundry focusing on providing best-
in-class vertical platform solutions, system knowledge and services to help
SoC customers go from chip specification to production. Under the
partnership, customers now have the option to work directly with VeriSilicon
to integrate MoSys’ innovative memory technology into their designs across a
wide range of foundry options and advanced process geometries, such as 90
nm. By leveraging MoSys’ patented 1T-SRAM ultra high density memory
offering, customers are able to significantly lower their silicon costs while
maintaining high performance and low power.
"We are very happy to work with VeriSilicon to proliferate our technology
to a wider range of customers. Over the last few years, VeriSilicon has
garnered numerous industry awards by amassing a successful track record
across impressive world wide customer base. Our expectation is that the
combination of our pioneering memory technology and VeriSilicon leading ASIC
capabilities will result in uniquely optimal silicon solutions for numerous
types of applications," said Chet Silvestri, chief executive officer of MoSys.
"Our collaboration with MoSys represents VerSilicon’s commitment to
provide customers a one-stop-shop for their IP and turnkey needs. By working
with a technology leader like MoSys, our customers can also leverage our
other IP products and design services to develop ultra-competitive solutions
in terms of silicon area and power to meet their most demanding product
requirements," said Federico Arcelli, Corporate vice-president of WW sales &
marketing at VeriSilicon.
About VeriSilicon
VeriSilicon Holdings Co., Ltd. is a leading world class ASIC design
foundry providing libraries, semiconductor IPs, design and turnkey
manufacturing services with multi-fab capability supporting process
technologies down to 90nm. VeriSilicon has achieved first silicon success and
entered volume production of many complex, multi-million gates SoCs using the
leading wafer foundries in APAC and China. VeriSilicon has operations in US,
China, Taiwan, Japan, France, and Korea. Over 500 customers worldwide have
licensed VeriSilicon IPs and Standard Design Platforms. In 2005, VeriSilicon
was ranked number three in Deloitte Technology Fast 50 China, the top 50
fastest-growing technology companies in China and number six in Deloitte Fast
500 Asia Pacific, the top 500 fastest-growing technology companies in Asia
Pacific. VeriSilicon was also named one of the Red Herring 100 Private
Companies of Asia, and selected as one of the EE Times 60 Emerging Startups.
More information is available at http://www.verisilicon.com .
About MoSys Inc
Founded in 1991, MoSys develops, licenses and markets innovative memory
technologies for semiconductors. MoSys’ patented 1T-SRAM technologies offer
a combination of high density, low power consumption, high speed and low cost
unmatched by other available memory technologies. The single transistor bit
cell used in 1T-SRAM memory results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random address
access cycles associated with traditional SRAMs. In addition, these
technologies can reduce operating power consumption by a factor of four
compared with traditional SRAM technology, contributing to making them ideal
for embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 100 million chips incorporating 1T-SRAM
embedded memory technologies, demonstrating excellent manufacturability in a
wide range of silicon processes and applications. MoSys is headquartered at
755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is
available on MoSys’ website at http://www.mosys.com .
